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Author: Admin | 2025-04-28
Memory by Lee et al. [208] could be a plus to the realization of the future WMC devices. It is worth noting that being flexible or transparent does not hinder the performance and operational stability of the WMC devices [206]. The insets shown in Fig. 19 depict the operational characteristics of a flexible transparent memory device, and it shows that the flexibility or transparency does not obstruct WMC’s operational performance.Fig. 19I–V current characteristics showing the forming process of a ZnO/Ag/ZnO device (ZAZ) and b crossly stacked layers of Al\(_{2}\)O\(_{3}\)/Ag/Al\(_{2}\)O\(_{3}\) (AAA). The logarithmic plots of the I–V characteristics of c ZAZ device d AAA stacked layers device. These unipolar I–V characteristics of the devices show that flexibility or transparency does not hinder the operational characteristics of WMC devices [208]Full size imageOther dielectric material for RRAMFurthermore, other materials have been explored and had shown to be promising storage materials. Many dielectric materials such as perovskite oxides, nitrides, perovskites, chalcogenides, organic materials, hybrid oxides and two-dimensional (2D) material like graphene were explored as given in Table 2.Table 2 Summary of the switching properties of some other dielectric materialsFull size tableAs thin films in RS memory devices, various perovskite oxide materials, such as BiFeO, SrTiO\(_{3}\), BaTiO\(_{3}\), Pr\(_{x}\)Ca\(_{1-x}\)MnO\(_{3}\) (PCMO) and LaAlO\(_{3}\) , have been extensively studied. Even though perovskite oxides have shown some promising characteristics in RRAM application, they have some common manufacturing limitations that hinder their adoption in new applications like the processing in high-temperature domain, rigid and brittle ceramic films (not flexible) and their complex constituents make it difficult to control their stoichiometry. Therefore, attention has begun to be shifted to organometal halide perovskite materials (OHP) that have shown good performance in the RRAM devices [217, 218]. These kinds of perovskite material consist of three fundamental constituents (ABX\(_{3}\)): A is the organic cation (CH\(_{3}\)NH\(_{3}\)), B is the metal cation and finally X is the halide anion of either iodine (I), bromine (Br) or chlorine (Cl).However, due to the organic groups in the OHP materials, they are associated with an inherent thermal and photostability constraints due to the interaction with moisture under ambient conditions. On the other hand, by substituting organic cations with inorganic cations such as Cs, the stability of OHPs can be enhanced while retaining their structural and electrical properties [235]. Also, the OHP material can have moisture and air stability when octylammonium halide is used as the capping agent [236]. The presence of a capping agent with a long alkyl chain provides the materials with enhanced moisture and air stability as well as good ease of processing from common solvents. Moreover, the OHP materials can also enhance their operational characteristics via chloride doping, and the reliability, bandgap, defect density and on/off resistance ratio (from 2 to 500) of the device increase with the increase in the chloride doping, and also, the chloride doping makes the device to be stable even after six (6) months of development [218]. Further modifications in electrical characteristics may be feasible in these materials by adjusting the
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