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Author: Admin | 2025-04-28
The electrical characteristics of flexible transistors by stacking IGZO on a PI substrate and implemented stretching simulations for two cases (with or without organic passivation layer) (Figure 3f,g) [63]. In this simulation, even after 10,000 cycles repeated stretching tests at 30% extension, there was no change in the electrical properties in either case. Furthermore, the organic passivation layer reduced the mechanical stress applied to the IGZO. An examination of the change in stress applied to the upper surface of IGZO revealed a decrease in stress at the center from 30.7 to 17.4 MPa. Based on the observed result, it is indicated that the organic passivation film enables the reduction of the mechanical stress applied to the inorganic material layer under both bending and stretching conditions.Kim et al. fabricated a charge trapping memory thin-film transistor (CTM TFT) with a wavy-dimensional structure using IGZO and zinc oxide (ZnO) (Figure 3h-j) [64]. IGZO was used as the channel layer, and ZnO was used as the channel trap layer. The wavy-dimensional structure allows the device to withstand significant mechanical strain by reducing the applied strain force. As a result, the CTM TFT had a wide memory window of 23.8 V and obtained a large switching current ratio of 106 with a short program pulse of 1 μs. In addition, the transistor showed excellent stretching durability over 150,000 times through optimization of process conditions even at an elongation of 50%. Sim et al. attempted to improve the flexibility by fabricating indium zinc oxide (IZO) TFTs with an open mesh configuration, similar to a kirigami structure [65]. The manufactured IZO TFT had a mobility and threshold voltage of 2.24 cm2/Vs and 4.4 V, respectively. When IZO TFT was stretched, the mechanical elasticity was obtained up to 30%, and stable device operation was achieved. In addition, the
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