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Author: Admin | 2025-04-28
Schematic diagram of the flexible device structure and optical image (adapted from [53] with permission from Springer Nature); (b) Image of the IGTO TFTs and their bending test procedure; (c) Transfer characteristics for the IGTO TFTs (adapted from [56] with permission from American Chemical Society); (d) BTS (VGS = ±20 V at 60 °C) time evolution of the threshold voltages for the ε = 0.19% (circle) and 0.93% (square) cases in a vacuum and air ambient; (e) Vth shift after 10,000 s BTS for different strain and ambient conditions (adapted from [57] with permission from Taylor & Francis). Figure 3. (a) Photograph of the IGZO TFT device at strain condition; (b) The evolution of wrinkles at different stretching values is shown (0%); (c) The evolution of the wrinkles at different stretching values is shown (5.1%); (d) Transfer curve during the PBS tests with a lapse of stress time in pre-strain of 50% (adapted from [60] with permission from American Chemical Society); (e) Crack formation near its channel region in strain values above 5% (scale bar: 50 μm) (adapted from [62] with permission from American Chemical Society); (f) Stretching simulation without and with an organic passivation layer; (g) Horizontal equivalent (Von Mises) stress distributions in the stretched state (adapted from [63] with permission from American Chemical Society); (h) Photograph of device surface under a mechanically stretching situation; (i) Transfer characteristics of the stretchable TFTs when pre-strain values were varied up to 60%; (j) Variations in MW and SS as a function of pre-strain value (adapted from [64] with permission from American Chemical Society). Figure 3. (a) Photograph of the IGZO TFT device at strain condition; (b) The evolution of wrinkles at different stretching values is shown (0%); (c) The evolution of the wrinkles at different stretching values is shown (5.1%); (d)
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